We investigate spin-dependent transport properties of two-dimensional electron systems modulated by both the stray field from a ferromagnetic metal (FM) stripe and the electrostatic potential (EP) provided by two normal metal Schottky stripes which sandwich the FM stripe. The EP consists of a single barrier and a single well. By switching the gate voltages applied to the Schottky stripes, the barrier and the well exchange their positions. Accordingly, the spatial region, where spin-dependent resonant tunneling happens, is transferred from one side of the FM stripe to the other, resulting in a rotation or a reversal of the spin polarization orientation. (C) 2007 Elsevier B.V. All rights reserved
We theoretically investigate the electron transport and spin polarization of two coupled quantum wel...
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) i...
The spin-dependent electron resonant tunneling through nonmagnetic III-V semiconductor asymmetric do...
We reexamine spin-dependent transport properties of two-dimensional electrons modulated by the stray...
Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas a...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
One of the main challenges of the field of spintronics [1] is the controlled injection of spin polar...
We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of...
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin...
Includes bibliographical references (pages [105]-107).Spintronics aims at using not only the electro...
We study electron tunneling through a planar magnetic and electric barrier on the surface of a three...
We theoretically investigate the electron transport and spin polarization of two coupled quantum wel...
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) i...
The spin-dependent electron resonant tunneling through nonmagnetic III-V semiconductor asymmetric do...
We reexamine spin-dependent transport properties of two-dimensional electrons modulated by the stray...
Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas a...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
International audienceNonequilibrium spin-dependent transport in magnetic tunnel junctions comprisin...
One of the main challenges of the field of spintronics [1] is the controlled injection of spin polar...
We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of...
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin...
Includes bibliographical references (pages [105]-107).Spintronics aims at using not only the electro...
We study electron tunneling through a planar magnetic and electric barrier on the surface of a three...
We theoretically investigate the electron transport and spin polarization of two coupled quantum wel...
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) i...
The spin-dependent electron resonant tunneling through nonmagnetic III-V semiconductor asymmetric do...