A simulation model for embedding the bias of a transistor is presented. The model exploits the simulator equilibrium point calculation to set the bias point of the transistor. The model uses negative feedback to set the bias point according to what the designer desires. When the simulator goes into its main analyses, the negative feedback is broken and embedded bias sources are added. This way it is possible to test an amplifier design before implementing the bias circuits. The model is technology independent and can be used on any kind of transisto
In this thesis, techniques are presented for determining the model parameter values required by comp...
The purpose of the study is proposing a gate oxide degraded MOSFET model that represents the degrade...
In the present paper of Microelectronics, some simulations of a typical circuit of amplification, us...
The design of transistor circuits with bias stability of a specified tolerance is a complicated elec...
In Consumer Electronic Market, the product development cycle would become shorter and shorter for i...
Abstract:- The paper proposes a procedure to calculate the sensitivity factors of the quiescent drai...
A biasing method is described, intended to make auto-mated biasing of at least some classes of analo...
The operation of a typical common emitter amplifier, including negative feedback, is studied taking ...
Based on experimental data and physical understanding of the narrow width effect of source/drain par...
A scalable bipolar transistor model for circuit simulation has been developed. The model accounts fo...
<p>This figure shows 1000 Monte Carlo (MC) runs. In each run, the threshold voltage of all transisto...
An animation that shows, with a supply voltage connected across the collector and the emitter, a pos...
This paper describes a simulation program that was developed to compare the uncertainties that would...
A formal approach for nonlinear modeling of FETs is presented. The intrinsic transistor is described...
A MATLAB method is introduced for biasing CMOS analog cells operating in weak inversion region and b...
In this thesis, techniques are presented for determining the model parameter values required by comp...
The purpose of the study is proposing a gate oxide degraded MOSFET model that represents the degrade...
In the present paper of Microelectronics, some simulations of a typical circuit of amplification, us...
The design of transistor circuits with bias stability of a specified tolerance is a complicated elec...
In Consumer Electronic Market, the product development cycle would become shorter and shorter for i...
Abstract:- The paper proposes a procedure to calculate the sensitivity factors of the quiescent drai...
A biasing method is described, intended to make auto-mated biasing of at least some classes of analo...
The operation of a typical common emitter amplifier, including negative feedback, is studied taking ...
Based on experimental data and physical understanding of the narrow width effect of source/drain par...
A scalable bipolar transistor model for circuit simulation has been developed. The model accounts fo...
<p>This figure shows 1000 Monte Carlo (MC) runs. In each run, the threshold voltage of all transisto...
An animation that shows, with a supply voltage connected across the collector and the emitter, a pos...
This paper describes a simulation program that was developed to compare the uncertainties that would...
A formal approach for nonlinear modeling of FETs is presented. The intrinsic transistor is described...
A MATLAB method is introduced for biasing CMOS analog cells operating in weak inversion region and b...
In this thesis, techniques are presented for determining the model parameter values required by comp...
The purpose of the study is proposing a gate oxide degraded MOSFET model that represents the degrade...
In the present paper of Microelectronics, some simulations of a typical circuit of amplification, us...