Highly controlled InAs nanowires on Si(111) wafers by MOVPE

We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei