Add to ORKGIn this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme
We report a comparison of material and device characteristics of metamorphic In0.53Ga0.47As channel ...
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si sub...
This letter reports the implementation of the bottom-gate MOSFET, which possesses the following full...
We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic c...
III-V MOSFETs are currently being considered as a candidate for future high performance transistors ...
International audienceIn this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 ...
This article describes a process flow that has enabled the first demonstration of functional, fully ...
A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air...
This article describes a process flow which has enabled the first demonstration of functional, fully...
In conclusion, this paper reports a number of significant developments in III-V MOSFET devices. Reta...
This paper reports the implementation of the bottomgate MOSFET which possesses the following fully-s...
We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs...
[[abstract]]The use of compound semiconductors as the channel material has recently drawn great atte...
As the Si CMOS roadmap for scaling approaches its fundamental physics limits, alternatives have been...
In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire me...
We report a comparison of material and device characteristics of metamorphic In0.53Ga0.47As channel ...
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si sub...
This letter reports the implementation of the bottom-gate MOSFET, which possesses the following full...
We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic c...
III-V MOSFETs are currently being considered as a candidate for future high performance transistors ...
International audienceIn this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 ...
This article describes a process flow that has enabled the first demonstration of functional, fully ...
A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air...
This article describes a process flow which has enabled the first demonstration of functional, fully...
In conclusion, this paper reports a number of significant developments in III-V MOSFET devices. Reta...
This paper reports the implementation of the bottomgate MOSFET which possesses the following fully-s...
We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs...
[[abstract]]The use of compound semiconductors as the channel material has recently drawn great atte...
As the Si CMOS roadmap for scaling approaches its fundamental physics limits, alternatives have been...
In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire me...
We report a comparison of material and device characteristics of metamorphic In0.53Ga0.47As channel ...
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si sub...
This letter reports the implementation of the bottom-gate MOSFET, which possesses the following full...
