This dissertation explores the use of modular multilevel converter (MMC) architectures, coupled with wide-bandgap semiconductors, to achieve high power-density in power electronics converters. At the converter level, the capabilities of the modular multilevel converter are investigated for their use in low voltage, low power, DC-DC and DC-AC applications. This investigation shows that the use of modular multilevel architectures enables low voltage Gallium Nitride high electron mobility transistors (GaN HEMTs) to be used in applications for which their voltage thresholds are not typically suited. This results in lightweight, compact, conversion systems. GaN HEMTs have been shown to provide a low loss, low volume alternative to Silicon tra...