Effect Of Indium Doping On Structural, Optical And Electrical Properties Of Zinc Oxide Thin Films

Konduktif oksida lutsinar (TCO) seperti filem nipis zink oksida (ZnO) didopkan logam mempunyai aplikasi penting dalam peranti optoelektronik. Filem nipis ZnO didopkan logam mempunyai kelebihan kerana mereka boleh difabrikasikan dalam proses yang agak mudah dan menjimatkan. Walau bagaimanapun, ciri-ciri tersebut adalah sensitif kepada jumlah logam pendopan di dalam hos bahan zink oksida. Dalam kajian ini, kesan kandungan indium (In) dan juga suhu penyepuhlindapan pada sifat-sifat struktur, optik dan elektrik ZnO disiasat. Melalui percikan magnet frekuensi radio (RF) dari target ZnO / In2O3 tersinter dengan kandungan In berbeza di antara 1-7 wt. %, filem nipis indium zink oksida (IZO) telah berjaya ditumbuhkan ke atas substrat Si (100) dan substrat kaca yang telah dibersihkan secara ultrasonik. Filem nipis IZO telah ditumbuhkan dalam persekitaran argon pada suhu 150ºC dengan kuasa 100W. Selain daripada unsur-unsur zink (Zn) dan oksigen (O), spektrum tenaga serakan sinar-X (EDX) juga mengesan unsur In daripada filem nipis IZO, menunjukkan bahawa In telah berjaya diserapkan ke dalam hos bahan (ZnO). Mikroskop imbasan elektron (SEM) menunjukkan bahawa filem-filem nipis IZO mempunyai morfologi permukaan yang berterusan tanpa kehadiran zarah-zarah asing. Filem nipis ZnO tanpa dop juga difabrikasikan melalui kondisi percikan yang sama untuk perbandingan. Analisis pembelauan sinar-X (XRD) menunjukkan bahawa filem nipis mempunyai kecenderungan orientasi di sepanjang satah (002). Transparent conducting oxide (TCO) such as metal-doped zinc oxide (ZnO) thin films have important applications in optoelectronic devices. Metal-doped ZnO thin films have an advantage as they can be fabricated in a relatively simple and economical process. However, their properties are sensitive to the amount of metal doping in the zinc oxide host material. In this work, the effect of indium (In) content as well as the annealing temperature on the structural, optical and electrical properties of ZnO were investigated. The Indium-doped ZnO (IZO) thin films were successfully deposited onto ultrasonically cleaned Si (100) and glass substrates by radio frequency (RF) magnetron sputtering from sintered ZnO/In2O3 target with different In content ranging from 1 to 7 wt. %. The IZO thin films were grown in argon environment at 150ºC with a bias power of 100W. Apart from zinc (Zn) and oxygen (O) elements, the energy dispersive x-ray (EDX) spectra of the IZO thin films also detected In element, indicating that In were successfully incorporated into the host material (ZnO). The scanning electron microscopy (SEM) shows that the IZO thin films have a continuous surface morphology without the presence of foreign particles. Un-doped ZnO films were also fabricated under the same sputtering conditions for comparison. The X-ray diffraction (XRD) analysis show that the thin films have preferential orientation along (002) plane