Add to ORKGThis paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 C before failure
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
NASA has been developing very high temperature semiconductor integrated circuits for use in the hot ...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demon...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
NASA has been developing very high temperature semiconductor integrated circuits for use in the hot ...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demon...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...