Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in do...
We perform self-consistent Schr\ua8 odinger-Poisson calculations with exchange and correlation corre...
We perform self-consistent Schr¨ odinger-Poisson calculations with exchange and correlation correct...
In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthe...
Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures....
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs she...
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs she...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
Semiconductor nanowires grown via the vapour-liquid-solid (VLS) mechanism are promising for miniatur...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining str...
The modulation of complex GaAs/AlGaAs core-shell nanowire heterostructures by the process of embeddi...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
We have investigated the structural properties and photoluminescence of novel axial and radial heter...
GaAs/AlGaAs core–shell nanowires (NWs) were grown on Si(111) by Ga-assisted molecular beam epitaxy v...
We perform self-consistent Schr\ua8 odinger-Poisson calculations with exchange and correlation corre...
We perform self-consistent Schr¨ odinger-Poisson calculations with exchange and correlation correct...
In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthe...
Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures....
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs she...
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs she...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
Semiconductor nanowires grown via the vapour-liquid-solid (VLS) mechanism are promising for miniatur...
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dy...
GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining str...
The modulation of complex GaAs/AlGaAs core-shell nanowire heterostructures by the process of embeddi...
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoel...
We have investigated the structural properties and photoluminescence of novel axial and radial heter...
GaAs/AlGaAs core–shell nanowires (NWs) were grown on Si(111) by Ga-assisted molecular beam epitaxy v...
We perform self-consistent Schr\ua8 odinger-Poisson calculations with exchange and correlation corre...
We perform self-consistent Schr¨ odinger-Poisson calculations with exchange and correlation correct...
In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthe...