Effect of growth interruptions on TiO2 films deposited by plasma enhanced chemical vapour deposition
- Li, D.
- Goullet, A.
- Carette, Michèle
- Granier, A.
- Landesman, Jean-Pierre
DOIAbstract
International audienceTiO2 films of similar to 300 nm were deposited at low temperature (<140 degrees C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V-f) or the substrate self-bias voltage (V-b) of -50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about 100 nm. In one case of Vf, the films of 300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions re...
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