International audienceAn effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In2 Se3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2 Se3 , a high-quality γ-In2 Se3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In2 Se3 /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In2 Se3 /Si heterojunction very interesting as h...
Despite their high absorption coefficients, most two-Dimensional (2D) Transition Metal Dichalcogenid...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
International audienceAn effective colloidal process involving the hot-injection method is developed...
A Se nanorod film is successfully synthesized on a hydrothermally grown CdS layer through a facile v...
We demonstrate extraordinary photoconductive behavior in two-dimensional (2D) crystalline indium sel...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in nex...
Cu(In,Ga)Se2 (CIGS) is a promising light harvesting material for large-area broadband photodetection...
International audienceA series of Sb2Se3/β-In2Se3 heterojunction composites with different contents ...
DoctorRecently, nanowires from group IV, III-V, II-VI, and other materials have received considerabl...
International audienceSb2Se3 is a highly interesting narrow band gap semiconductor with promising ap...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
Despite their high absorption coefficients, most two-Dimensional (2D) Transition Metal Dichalcogenid...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
International audienceAn effective colloidal process involving the hot-injection method is developed...
A Se nanorod film is successfully synthesized on a hydrothermally grown CdS layer through a facile v...
We demonstrate extraordinary photoconductive behavior in two-dimensional (2D) crystalline indium sel...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photocon...
Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in nex...
Cu(In,Ga)Se2 (CIGS) is a promising light harvesting material for large-area broadband photodetection...
International audienceA series of Sb2Se3/β-In2Se3 heterojunction composites with different contents ...
DoctorRecently, nanowires from group IV, III-V, II-VI, and other materials have received considerabl...
International audienceSb2Se3 is a highly interesting narrow band gap semiconductor with promising ap...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
Despite their high absorption coefficients, most two-Dimensional (2D) Transition Metal Dichalcogenid...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si...