Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy, E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusion activation energies
We report results from an efficient, ab initio method for self-consistent calculations of electronic...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...
Density functional theory calculations are used to investigate the formation and diffusion of tin-va...
Electronic structure calculations are used to study the stability, concentration, and migration of v...
Electronic structure calculations are used to predict the activation enthalpies of diffusion for a r...
Recent experimental and theoretical studies revealed that dopants in germanium (Ge) cluster with lat...
Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) ...
Electronic structure calculations are used to investigate the binding energies of defect pairs compo...
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for ...
At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium subst...
The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization...
Significant obstacles remain for the fabrication of germanium n-MOSFETs, including enhanced diffusio...
This thesis covers the application of the local density approximation of density functional theory t...
Significant obstacles remain for the fabrication of germanium n-MOSFETs, including enhanced diffusio...
We report results from an efficient, ab initio method for self-consistent calculations of electronic...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...
Density functional theory calculations are used to investigate the formation and diffusion of tin-va...
Electronic structure calculations are used to study the stability, concentration, and migration of v...
Electronic structure calculations are used to predict the activation enthalpies of diffusion for a r...
Recent experimental and theoretical studies revealed that dopants in germanium (Ge) cluster with lat...
Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) ...
Electronic structure calculations are used to investigate the binding energies of defect pairs compo...
Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for ...
At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium subst...
The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization...
Significant obstacles remain for the fabrication of germanium n-MOSFETs, including enhanced diffusio...
This thesis covers the application of the local density approximation of density functional theory t...
Significant obstacles remain for the fabrication of germanium n-MOSFETs, including enhanced diffusio...
We report results from an efficient, ab initio method for self-consistent calculations of electronic...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffu...