Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

Mudryi, A.V.
Yakushev, M.V.
Volkov, V.A.
Zhivulko, V.D.
Borodavchenko, O.M.
Martin, R.W.

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Publication date

June 2017

DOI

10.1016/j.jlumin.2017.02.014

Publisher

Elsevier BV

ISSN

0022-2313

Citation count (estimate)

Abstract

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively

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Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

Abstract

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Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

Abstract

Extracted data

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