Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating

A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature is observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved