This dataset contains the raw data of figure 1-7 in the journal paper entitled "Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory" published in IOP Journal of Physics D: Applied Physics</span
This dataset is for the paper titled “Electrodeposition of GeSbTe Based Resistive Switching Me...
Dataset of figures in the paper Fan, J., Kapur, O., Huang, R., De Groot, C., & Jiang, L. (2018)....
A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrO2/P...
We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that e...
This dataset contains the raw data of figure 1-7 in the journal paper: Huang, R. (2017). Compliance...
The physical nature of bipolar resistive switching in Pt/BiFe0.95Mn0.05O3/Pt memory device
Graduation date: 2012Resistive random access memory (RRAM) is a non-volatile memory technology based...
Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance...
In this paper, TiN/ZrO2/Pt sandwiched resistive switching memory devices were fabricated. The effect...
The bipolar resistive switching characteristics of a Pt/ZnO/Pt structure were investigated in this s...
In the future, Von Neumann and neuromorphic computing architectures will be made more energy efficie...
Dataset supports the article 'UV Induced Resistive Switching in Hybrid Polymer Metal Oxide Memri...
Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory device...
With the increasing demand for high-density, low-cost, high-speed and low-power nonvolatile memory (...
This letter investigated the electrical characteristics of resistance random access memory (RRAM) wi...
This dataset is for the paper titled “Electrodeposition of GeSbTe Based Resistive Switching Me...
Dataset of figures in the paper Fan, J., Kapur, O., Huang, R., De Groot, C., & Jiang, L. (2018)....
A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrO2/P...
We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that e...
This dataset contains the raw data of figure 1-7 in the journal paper: Huang, R. (2017). Compliance...
The physical nature of bipolar resistive switching in Pt/BiFe0.95Mn0.05O3/Pt memory device
Graduation date: 2012Resistive random access memory (RRAM) is a non-volatile memory technology based...
Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance...
In this paper, TiN/ZrO2/Pt sandwiched resistive switching memory devices were fabricated. The effect...
The bipolar resistive switching characteristics of a Pt/ZnO/Pt structure were investigated in this s...
In the future, Von Neumann and neuromorphic computing architectures will be made more energy efficie...
Dataset supports the article 'UV Induced Resistive Switching in Hybrid Polymer Metal Oxide Memri...
Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory device...
With the increasing demand for high-density, low-cost, high-speed and low-power nonvolatile memory (...
This letter investigated the electrical characteristics of resistance random access memory (RRAM) wi...
This dataset is for the paper titled “Electrodeposition of GeSbTe Based Resistive Switching Me...
Dataset of figures in the paper Fan, J., Kapur, O., Huang, R., De Groot, C., & Jiang, L. (2018)....
A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrO2/P...