Abstract(100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films with 500 and 1300 nm in thickness were grown by metal organic chemical vapor deposition. Remained strain was almost relaxed because the crystal structure of the films was almost the same as that of bulk Pb(Mg1/3Nb2/3)O3. Relative dielectric constant showed the maximum value against the temperature that depended on the measurement frequency. Maximum relative dielectric constant, εr(max.), and the temperature showing εr(max.), T(max.), decreased and increased with the frequency, respectively, are in good agreement with reported data for the bulk. εr(max.) and T(max.), respectively increased and decreased with the film thickness and (111)-oriented films showed larger value than...
The local compositional heterogeneity associated with the lack of long-range ordering of Mg2+and Nb5...
Due to the lattice mismatch between the film and substrate, an anisotropically in-plain strain can b...
Epitaxial growth of strained, ferroelectric oxide filmsJ. Schwarzkopf1, M. Schmidbauer1, J. Sellmann...
Abstract(100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films with 500 and 1300 nm in thickness...
Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (00...
Author name used in this publication: Y. WangAuthor name used in this publication: H. L. W. ChanAuth...
Relaxor-type ferroelectric (1-x)Pb(Mg1/3Nb2/3)O 3-xPbTiO3 (PMN-PT) films, 2-3 μm in thickness, with ...
The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 on (0...
Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–...
Abstract The electrical properties of (1- Self polarisation is thus present, which indicates the exi...
The authors have grown epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) and (1-x)(Pb(Mg{sub 1/3}Nb...
Due to the lattice mismatch between the film and substrate, an anisotropically in-plain strain can b...
Domain structures of epitaxial PbTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalor...
The local compositional heterogeneity associated with the short-range ordering of Mg and Nb in PbMg1...
Single-crystal, single-phase Pb(ZrxTi1−x)O3 films (x=0–0.4) were grown on (001)SrTiO3 and SrTiO3:Nb ...
The local compositional heterogeneity associated with the lack of long-range ordering of Mg2+and Nb5...
Due to the lattice mismatch between the film and substrate, an anisotropically in-plain strain can b...
Epitaxial growth of strained, ferroelectric oxide filmsJ. Schwarzkopf1, M. Schmidbauer1, J. Sellmann...
Abstract(100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films with 500 and 1300 nm in thickness...
Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (00...
Author name used in this publication: Y. WangAuthor name used in this publication: H. L. W. ChanAuth...
Relaxor-type ferroelectric (1-x)Pb(Mg1/3Nb2/3)O 3-xPbTiO3 (PMN-PT) films, 2-3 μm in thickness, with ...
The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 on (0...
Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–...
Abstract The electrical properties of (1- Self polarisation is thus present, which indicates the exi...
The authors have grown epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) and (1-x)(Pb(Mg{sub 1/3}Nb...
Due to the lattice mismatch between the film and substrate, an anisotropically in-plain strain can b...
Domain structures of epitaxial PbTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalor...
The local compositional heterogeneity associated with the short-range ordering of Mg and Nb in PbMg1...
Single-crystal, single-phase Pb(ZrxTi1−x)O3 films (x=0–0.4) were grown on (001)SrTiO3 and SrTiO3:Nb ...
The local compositional heterogeneity associated with the lack of long-range ordering of Mg2+and Nb5...
Due to the lattice mismatch between the film and substrate, an anisotropically in-plain strain can b...
Epitaxial growth of strained, ferroelectric oxide filmsJ. Schwarzkopf1, M. Schmidbauer1, J. Sellmann...