Dual Gated Silicon Nanowire Field Effect Transistors

AbstractSilicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing units. We report here on a top down fabrication process in SOI wafers yielding SiNWFETs. We operate the SiNWFETs in a liquid cell and control their operation with two gates: a liquid gate and a back gate. We compare the combined effects of the two gates (dual gating) on the transport characteristics in electrolytes and show that both gates are essential to perform well-defined sensing experiments