AbstractWhen physicists form atomic surfaces using the technologically important semiconductor material gallium arsenide (GaAs), the surfaces appear in one of two kinds of state: flat or rough. But a team of physicists from Universisty of Arkansas, Albany and Oklahoma show experimentally that there’s a third type of surface, and this state depends upon the interactions of distant atomic neighbours.This is a short news story only. Visit www.three-fives.com for the latest advanced semiconductor industry news
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractLenslet Ltd, specialising in optical digital signal processing, has demonstrated EnLight, a ...
AbstractASM International NV is to enter into a long-term co-operative agreement with the University...
AbstractWhat is claimed to be the industry’s first 90W c-band GaAs field effect transistor (GaAs FET...
AbstractInfineon has taken what it claims is the world record for the highest clocked integrated cir...
AbstractBAE Systems is working with the UK MOD to develop CONDOR II capability to enhance situationa...
AbstractPhysicists at Cambridge University, UK, have developed a method to make quantum electronic d...
AbstractA Bulgarian company has invented a new multi-layer metal coating deposited by chemical and e...
AbstractThe current strength of the gallium arsenide integrated circuit (GaAs IC) market, together w...
AbstractMilitary phased-array radar systems (PARs) coming into service shortly will require thousand...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
AbstractOptical Metrology Innovations (OMI) offers Omiprobe, a new system based on photoreflectance ...
AbstractGaAs and related compound semiconductors have military origins and the past decade has seen ...
AbstractRWTH Aachen’s Electromagnetics Laboratory (ITHE) has ordered an Aixtron AIX 200/4 RF-S. For ...
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrat...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractLenslet Ltd, specialising in optical digital signal processing, has demonstrated EnLight, a ...
AbstractASM International NV is to enter into a long-term co-operative agreement with the University...
AbstractWhat is claimed to be the industry’s first 90W c-band GaAs field effect transistor (GaAs FET...
AbstractInfineon has taken what it claims is the world record for the highest clocked integrated cir...
AbstractBAE Systems is working with the UK MOD to develop CONDOR II capability to enhance situationa...
AbstractPhysicists at Cambridge University, UK, have developed a method to make quantum electronic d...
AbstractA Bulgarian company has invented a new multi-layer metal coating deposited by chemical and e...
AbstractThe current strength of the gallium arsenide integrated circuit (GaAs IC) market, together w...
AbstractMilitary phased-array radar systems (PARs) coming into service shortly will require thousand...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
AbstractOptical Metrology Innovations (OMI) offers Omiprobe, a new system based on photoreflectance ...
AbstractGaAs and related compound semiconductors have military origins and the past decade has seen ...
AbstractRWTH Aachen’s Electromagnetics Laboratory (ITHE) has ordered an Aixtron AIX 200/4 RF-S. For ...
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrat...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractLenslet Ltd, specialising in optical digital signal processing, has demonstrated EnLight, a ...
AbstractASM International NV is to enter into a long-term co-operative agreement with the University...