AbstractStudies on channel cracking are generally limited to elastic films on elastic or inelastic substrates. There are important applications were the cracking process involves extensive plasticity in both the film and substrate, however. In this work steady-state channel cracking in inelastic thin-film bilayers undergoing large-scale yielding from thermal or mechanical loading is studied with the aid of a plane-strain FEA. The plasticity of the film and substrate, represented by a Ramberg–Osgood constitutive law, each increases the energy release rate (ERR) relative to the linearly-elastic case. This effect is more pronounced under mechanical loading where the entire bilayer undergoes large-scale yielding. To help assess the analytic app...
International audienceWhen a thin film moderately adherent to a substrate is subjected to residual s...
It is shown that unless the substrate is at least as stiff as the film, the energy stored in the sub...
The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and t...
AbstractStudies on channel cracking are generally limited to elastic films on elastic or inelastic s...
Thin films are commonly employed in many applications, varying from thermal barrier coatings to micr...
Crack onset strain measurements of a confined layer in tension provide the means for layer toughness...
AbstractInterfacial fracture (delamination) originating from channel or tunnel cracks is a common fa...
AbstractIn this paper, a method to estimate fracture toughness, Γf, from the first indenter-induced ...
textDifferent fracture modes have been observed in thin film structures. One common approach used in...
Channeling cracks in brittle thin films have been observed to be a key reliability issue for advance...
The report contains a description of the theory for throughsurface channeling crack in thin film sys...
International audienceThin brittle films on compliant substrates are used in many applications, as s...
The interface toughness of a thin coating/compliant substrate system is estimated based on the evolu...
Abstract – One of the most common forms of cohesive failure observed in brittle thin film subjected ...
Thin brittle coatings on polymers can be used to improve barrier properties. The interfacial adhesio...
International audienceWhen a thin film moderately adherent to a substrate is subjected to residual s...
It is shown that unless the substrate is at least as stiff as the film, the energy stored in the sub...
The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and t...
AbstractStudies on channel cracking are generally limited to elastic films on elastic or inelastic s...
Thin films are commonly employed in many applications, varying from thermal barrier coatings to micr...
Crack onset strain measurements of a confined layer in tension provide the means for layer toughness...
AbstractInterfacial fracture (delamination) originating from channel or tunnel cracks is a common fa...
AbstractIn this paper, a method to estimate fracture toughness, Γf, from the first indenter-induced ...
textDifferent fracture modes have been observed in thin film structures. One common approach used in...
Channeling cracks in brittle thin films have been observed to be a key reliability issue for advance...
The report contains a description of the theory for throughsurface channeling crack in thin film sys...
International audienceThin brittle films on compliant substrates are used in many applications, as s...
The interface toughness of a thin coating/compliant substrate system is estimated based on the evolu...
Abstract – One of the most common forms of cohesive failure observed in brittle thin film subjected ...
Thin brittle coatings on polymers can be used to improve barrier properties. The interfacial adhesio...
International audienceWhen a thin film moderately adherent to a substrate is subjected to residual s...
It is shown that unless the substrate is at least as stiff as the film, the energy stored in the sub...
The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and t...