AbstractRecent successes by a Nottingham University group includes the growth of GaMnAs material with world record Curie temperatures, and ferromagnetic TiCoO2 and GaMnN which shows ferromagnetism at room temperature. A characteristic of the GaMnAs layers grown by the group is their low resistivity that is accompanied by very weak high field magneto-resistance. This has enabled the group to separate the normal and anomalous contributions to the Hall effect and make the first accurate measurements of hole densities across a range of Mn compositions. Using this information the first meaningful comparison of theoretically predicted Curie temperatures and extraordinary Hall conductivities with experiment have been made. The samples were grown b...
The growth of magnetic semiconductors with Curie temperature above room temperature is one of the ma...
New semiconductor materials may enable next-generation â spintronicâ devices which exploit both t...
Journals published by the American Physical Society can be found at http://journals.aps.org/We repor...
AbstractRecent successes by a Nottingham University group includes the growth of GaMnAs material wit...
AbstractResearchers at the University of Arkansas and the College of William and Mary discovered tha...
Mathematical and Physical Sciences: 2nd Place (The Ohio State University Edward F. Hayes Graduate Re...
AbstractResearchers from the University of California at Santa Barbara have combined a single electr...
Magnetic semiconductors are attracting great interest because of their potential use for spintronics...
The main objective of the research in this consortium was to produce III-V semiconductor material ha...
Journal ArticleWe present a detailed investigation of the magnetic and magnetotransport properties o...
The 49th Magnetism & Magnetic Materials conference in Jacksonville, Florida, in November covered bas...
III-V semiconductors doped with Mn atoms have been studied recently for their potential applications...
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors ...
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors ...
The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most inte...
The growth of magnetic semiconductors with Curie temperature above room temperature is one of the ma...
New semiconductor materials may enable next-generation â spintronicâ devices which exploit both t...
Journals published by the American Physical Society can be found at http://journals.aps.org/We repor...
AbstractRecent successes by a Nottingham University group includes the growth of GaMnAs material wit...
AbstractResearchers at the University of Arkansas and the College of William and Mary discovered tha...
Mathematical and Physical Sciences: 2nd Place (The Ohio State University Edward F. Hayes Graduate Re...
AbstractResearchers from the University of California at Santa Barbara have combined a single electr...
Magnetic semiconductors are attracting great interest because of their potential use for spintronics...
The main objective of the research in this consortium was to produce III-V semiconductor material ha...
Journal ArticleWe present a detailed investigation of the magnetic and magnetotransport properties o...
The 49th Magnetism & Magnetic Materials conference in Jacksonville, Florida, in November covered bas...
III-V semiconductors doped with Mn atoms have been studied recently for their potential applications...
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors ...
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors ...
The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most inte...
The growth of magnetic semiconductors with Curie temperature above room temperature is one of the ma...
New semiconductor materials may enable next-generation â spintronicâ devices which exploit both t...
Journals published by the American Physical Society can be found at http://journals.aps.org/We repor...