AbstractThe limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor ...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
We propose a general definition of the boundary of the quasi-neutral region in a semiconductor with ...
AbstractThe limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar dr...
AbstractIn this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for sem...
Abstract: In this paper the vanishing Debye length limit (space charge neutral limit) of bipolar tim...
We study the quasi-neutral limit in an optimal semiconductor design problem constrained by a nonline...
AbstractIn this paper the vanishing Debye length limit of the bipolar time-dependent drift–diffusion...
textabstractA drift-diffusion model for semiconductors with nonlinear diffusion is considered. The m...
Abstract. A drift-diffusion model for semiconductors with nonlinear diffusion is considered. The mod...
The quasineutral limit in the transient quantum drift-diffusion equations in one space dimension is ...
AbstractWe establish the existence of entropy solutions for a bipolar hydrodynamic model for semicon...
AbstractThe first half of this paper is concerning with the nonlinear drift-diffusion semiconductor ...
AbstractThe electro-diffusion model, which arises in electrohydrodynamics, is a coupling between the...
AbstractThis paper is devoted to the derivation of (non-linear) drift-diffusion equations from the s...
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor ...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
We propose a general definition of the boundary of the quasi-neutral region in a semiconductor with ...
AbstractThe limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar dr...
AbstractIn this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for sem...
Abstract: In this paper the vanishing Debye length limit (space charge neutral limit) of bipolar tim...
We study the quasi-neutral limit in an optimal semiconductor design problem constrained by a nonline...
AbstractIn this paper the vanishing Debye length limit of the bipolar time-dependent drift–diffusion...
textabstractA drift-diffusion model for semiconductors with nonlinear diffusion is considered. The m...
Abstract. A drift-diffusion model for semiconductors with nonlinear diffusion is considered. The mod...
The quasineutral limit in the transient quantum drift-diffusion equations in one space dimension is ...
AbstractWe establish the existence of entropy solutions for a bipolar hydrodynamic model for semicon...
AbstractThe first half of this paper is concerning with the nonlinear drift-diffusion semiconductor ...
AbstractThe electro-diffusion model, which arises in electrohydrodynamics, is a coupling between the...
AbstractThis paper is devoted to the derivation of (non-linear) drift-diffusion equations from the s...
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor ...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
We propose a general definition of the boundary of the quasi-neutral region in a semiconductor with ...