AbstractIn this paper we present results on the use of multilayered a-SiC:H heterostructures as a device for wavelength-division demultiplexing of optical signals. These devices are useful in optical communications applications that use the wavelength division multiplexing technique to encode multiple signals into the same transmission medium. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photo generated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different ...
AbstractThis paper presents the results of the optoelectronic characterization of a PIN stacked phot...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...
In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device fo...
AbstractIn this paper we present results on the use of multilayered a-SiC:H heterostructures as a de...
In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengt...
In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a...
In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengt...
In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as ...
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplex...
In this paper we present results on the optimization of multilayered a-SiC:H heterostructures for wa...
Part 18: Electronics: Devices DesignInternational audienceCombined tunable WDM converters based on S...
oai:i-ETC.journals.isel.pt:article/13In this paper we report the use of a monolithic system that com...
In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination t...
In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination t...
AbstractThis paper presents the results of the optoelectronic characterization of a PIN stacked phot...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...
In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device fo...
AbstractIn this paper we present results on the use of multilayered a-SiC:H heterostructures as a de...
In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengt...
In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a...
In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengt...
In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as ...
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplex...
In this paper we present results on the optimization of multilayered a-SiC:H heterostructures for wa...
Part 18: Electronics: Devices DesignInternational audienceCombined tunable WDM converters based on S...
oai:i-ETC.journals.isel.pt:article/13In this paper we report the use of a monolithic system that com...
In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination t...
In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination t...
AbstractThis paper presents the results of the optoelectronic characterization of a PIN stacked phot...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...
The pi'npin photo device is a tandem a: SiC-H / a: Si-H heterostructures. The device is electrically...