DOIAbstract
AbstractBeryllium nitride thin films, candidates for optoelectronic applications, have been grown by pulsed laser deposition on silicon substrates. The films were prepared by ablating a beryllium foil in an N2 environment at several pressures and substrate temperatures. Real_time ellipsometric monitoring for the period of deposition was carried out in the 1.625 to 4.405 eV photon_energy range. The films were characterised in situ by electron spectroscopies and ex situ by AFM and SEM. A model for the growth of beryllium nitride was applied to reproduce the optical measurement and concurrently, the refractive index from the visible to the near ultraviolet spectral region was calculated. The estimated optical bandgap 4.0–4.2eV correlates close...
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