AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechanism of the IGBT module is analyzed in detail. The more integrative test data is obtained by expanding the temperature range of the accelerated lifetime test. On the basis of considering the current i and the maximal junction temperatureTjmax, an improved lifetime prediction model is obtained through fitting the data of the test. The improved model is more accurate than the existent ones by the analysis and contrast of the test data errors
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number...
During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechani...
Lifetime of power electronic devices, in particular those used for wind turbines, is short due to th...
Insulated Gate Bipolar Transistor (IGBT) is the core power device in the fields of railways, new ener...
Lifetime of power electronic devices, in particular those used for wind turbines, is short due to th...
Lifetime estimation of power semiconductor devices, and IGBT devices in particular, used in the powe...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health cond...
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number...
During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechani...
Lifetime of power electronic devices, in particular those used for wind turbines, is short due to th...
Insulated Gate Bipolar Transistor (IGBT) is the core power device in the fields of railways, new ener...
Lifetime of power electronic devices, in particular those used for wind turbines, is short due to th...
Lifetime estimation of power semiconductor devices, and IGBT devices in particular, used in the powe...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health cond...
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number...
During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...