Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy
- Noda, K.
- Terai, Y.
- Miura, N.
- Udono, H.
- Fujiwara, Y.
Publication date
December 2012
DOI Publisher
Published by Elsevier B.V. ISSN
1875-3892 Citation count (estimate)
3Abstract
AbstractDirect bandgap energy (Eg) and lattice deformations were investigated in β-FeSi2 epitaxial films grown by molecular beam epitaxy (MBE) with different growth condition. As Si/Fe flux ratio during the MBE growth became smaller than Si/Fe = 2.0, the lattice constants deviated from those of β-FeSi2 single crystal, which indicated an enhanced lattice deformation at the lower Si/Fe ratio. In photoreflectance (PR) measurements, the PR spectra shifted to lower photon energy with the enhanced lattice deformation. These results revealed that the Eg of β-FeSi2 epitaxial film was modified by the lattice deformation depending on the growth condition
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