AbstractStrain has significance for both the growth characteristics and material properties of thin epitaxial films. In this work, the method of lattice statics is applied to an epitaxial system with cubic symmetry, using harmonic potentials. The energy density and force balance equations are written using a finite difference formalism that clearly shows their consistency with continuum elasticity. For simplicity, the atomic interactions are assumed to be maximally localized. For a layered material system with a material/vacuum interface and with surface steps, force balance equations are derived, and intrinsic surface stress at the material/vacuum interface is included by treating the atoms at the surface as having different elastic proper...
We present a universal relation for crack surface cohesion including surface relaxation. Specificall...
A general description of epitaxy between thin films and substrates of any crystal symmetry was devel...
In heteroepitaxy, the mismatch of lattice constants in the crystal film and the substrate causes a m...
The surface of an epitaxial thin film typically consists of terraces separated by steps of atomic he...
We develop a general dynamical theory for the epitaxial growth of an elastic film , a theory that ac...
International audienceThe epitaxial contact between a three-dimensional (3D) deposited crystal A and...
The structural and energetic properties of [100] and [110] steps on the (001) surface of fcc metal h...
Multiscale models are developed to investigate the evolution of heteroepitaxial thin films at high t...
We present an analytical, elastic analysis for the energy and relaxation of stepped surfaces. The an...
Atomistic computer simulations are used to study the zero-temperature interaction between steps in v...
International audienceThese lectures deal with some elastic effects in crystal growth. We recall som...
International audienceThe importance of stress and strain effects on surface physics are reviewed. F...
International audienceA generalised Wulf-Kaishew theorem is given describing the equilibrium shape (...
We numerically study the energetics and atomic mechanisms of misfit dislocation nucleation and stres...
International audienceWe have studied the energetics, relaxation and interactions of steps on the Au...
We present a universal relation for crack surface cohesion including surface relaxation. Specificall...
A general description of epitaxy between thin films and substrates of any crystal symmetry was devel...
In heteroepitaxy, the mismatch of lattice constants in the crystal film and the substrate causes a m...
The surface of an epitaxial thin film typically consists of terraces separated by steps of atomic he...
We develop a general dynamical theory for the epitaxial growth of an elastic film , a theory that ac...
International audienceThe epitaxial contact between a three-dimensional (3D) deposited crystal A and...
The structural and energetic properties of [100] and [110] steps on the (001) surface of fcc metal h...
Multiscale models are developed to investigate the evolution of heteroepitaxial thin films at high t...
We present an analytical, elastic analysis for the energy and relaxation of stepped surfaces. The an...
Atomistic computer simulations are used to study the zero-temperature interaction between steps in v...
International audienceThese lectures deal with some elastic effects in crystal growth. We recall som...
International audienceThe importance of stress and strain effects on surface physics are reviewed. F...
International audienceA generalised Wulf-Kaishew theorem is given describing the equilibrium shape (...
We numerically study the energetics and atomic mechanisms of misfit dislocation nucleation and stres...
International audienceWe have studied the energetics, relaxation and interactions of steps on the Au...
We present a universal relation for crack surface cohesion including surface relaxation. Specificall...
A general description of epitaxy between thin films and substrates of any crystal symmetry was devel...
In heteroepitaxy, the mismatch of lattice constants in the crystal film and the substrate causes a m...