Gallium nitride materials are now a billion dollar industry for optoelectronics. At the same time the robust qualities of GaN make it promising for use in smaller, but no less important, specialist applications such as the nuclear and medical sectors. A case in point is the work underway by James Grant, Andrew Blue and co-workers at the Department of Physics & Astronomy, University of Glasgow. In development are detectors for harsh environments based on SiC and GaN. In parallel they are hoping to produce practical GaN UV detectors for proteomics - the study of proteins, notably that of circular dichrosim (CD)
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AlGaN and GaN have been investigated as UV detector materials for applications in protein structure ...
Gallium nitride materials are now a billion dollar industry for optoelectronics. At the same time th...
Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Coll...
In this thesis the work will focus on the development of wide band gap radiation detectors for radia...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardn...
thesisGallium nitride has excellent potential in radiation-hard high-power electronic devices due to...
AbstractIn the early stages of wide bandgap materials it was silicon carbide (SiC) that blazed the t...
The anticipated upgrade of the CERN Large Hadron Collider to ten times brighter luminosity poses a s...
Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ...
Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in m...
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AlGaN and GaN have been investigated as UV detector materials for applications in protein structure ...
Gallium nitride materials are now a billion dollar industry for optoelectronics. At the same time th...
Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Coll...
In this thesis the work will focus on the development of wide band gap radiation detectors for radia...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardn...
thesisGallium nitride has excellent potential in radiation-hard high-power electronic devices due to...
AbstractIn the early stages of wide bandgap materials it was silicon carbide (SiC) that blazed the t...
The anticipated upgrade of the CERN Large Hadron Collider to ten times brighter luminosity poses a s...
Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ...
Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in m...
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AlGaN and GaN have been investigated as UV detector materials for applications in protein structure ...