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High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor

  • Cercignani, C.
  • Gamba, I.M.
  • Levermore, C.D.
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Publication date
July 1997
Icon DOI
10.1016/S0893-9659(97)00069-4
Publisher
Published by Elsevier Ltd.
ISSN
0893-9659

Abstract

AbstractWe consider the Boltzmann-Poisson system for electrons in a semiconductor in the case of high fields and small devices. We discuss closures of moment equations and boundary conditions for both the distribution function and the moments

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