Electrical Characteristics of Ultraviolet Photodetector based on ZnO Nanostructures

AbstractZnO nanostructures were grown on p- type Si substrate by spray pyrolysis technic. A UV light was used as an illuminating source at 365nm. The current–voltage characteristics of the device under UV illumination showed an enhancement that dark current. The dark current is about 58μA, and the photocurrent is about 97μA under a reverse bias voltage of 6V. The photocurrent characteristic of photodetector is measured under 3V forward biases and after 18min it saturated. Continuous measurements indicate the reproducibility and stability of this UV photodetector. The Schottky diode parameters as the barrier height, the ideality factor, and the series resistance as calculated using a method developed by Cheung's method. It was found that ideality factor was greater than unity and barrier height was larger than 0,8eV