AbstractInfrared transmission topography has long been used to detect variations in gallium arsenide wafers that can cause dark-line defects that limit lifetime of GaAs lasers and solar cells. In the past, infrared transmission was measured over a whole wafer by scanning a small spot mechanically. Absorption was calculated at each location across the surface of the wafer and used to produce colour-coded plots that allow the wafer's characteristics to be determined at a glance. The program ran on VAX/VMS computers, but these are being taken out of service due to obsolescence. To overcome these problems, the author developed a graphics script using a state-of-the-art data analysis program which provides quick classification of GaAs wafers bas...
This paper describes Spatial Signature Analysis (SSA), a cooperative research project between SEMATE...
A review is presented of the mechanism of interaction of electromagnetic radiation in various spectr...
The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafe...
[[abstract]]We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in und...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
Two optical topographical methods for homogeneity control of GaAs wafers are presented. The first on...
A technique for automated measurement of whole-wafer etch pit density (EPD) for GaAs wafers is prese...
This work describes the development of a facility for the spatial and spectral analysis of semicondu...
An exploration of several nondestructive methods of electrical characterization of semiconductor sin...
Call number: LD2668 .T4 EECE 1989 S55Master of ScienceElectrical and Computer Engineerin
The main structural microdefects in GaAs are point defects (native defects, dopants), dislocations, ...
This paper describes Spatial Signature Analysis (SSA), a cooperative research project between SEMATE...
A review is presented of the mechanism of interaction of electromagnetic radiation in various spectr...
The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafe...
[[abstract]]We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in und...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
Two optical topographical methods for homogeneity control of GaAs wafers are presented. The first on...
A technique for automated measurement of whole-wafer etch pit density (EPD) for GaAs wafers is prese...
This work describes the development of a facility for the spatial and spectral analysis of semicondu...
An exploration of several nondestructive methods of electrical characterization of semiconductor sin...
Call number: LD2668 .T4 EECE 1989 S55Master of ScienceElectrical and Computer Engineerin
The main structural microdefects in GaAs are point defects (native defects, dopants), dislocations, ...
This paper describes Spatial Signature Analysis (SSA), a cooperative research project between SEMATE...
A review is presented of the mechanism of interaction of electromagnetic radiation in various spectr...
The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective...