AbstractOptimal detector / pre-amplifier combinations have been identified for the use of light ion IBIC (ion beam induced charge) to probe the physical structure of electrically active defects in damage cascades caused by heavy ion implantation. The ideal detector must have a sufficiently thin dead layer that incident ions will produce the majority of damage cascades in the depletion region of the detector rather than the dead layer. Detector and circuit noise must be low enough to detect the implantation of a single heavy ion as well as the decrease in the light ion IBIC signal caused by Shockley-Read-Hall recombination when the beam scans regions of the detector damaged by the heavy ion. The IBIC signals from three detectors irradiated w...
Abstract The design and implementation of linear electronics based on small-size, low-power charge...
This paper discusses the criteria that have been adopted tooptimize the signal processing in a showe...
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise ...
AbstractOptimal detector / pre-amplifier combinations have been identified for the use of light ion ...
High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test...
Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the pres...
The development of semiconductor detectors with an increased tolerance to high radiation levels ofte...
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) te...
Abstract Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has ...
The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of im...
This article belongs to the Section Physical Sensors.Gain suppression induced by excess carriers in ...
We present a new experimental procedure based on the ion beam induced charge collection (IBIC) to ch...
Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investi...
A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system f...
Abstract Ion beam induced charge collection (IBIC) is a powerful experimental technique to charact...
Abstract The design and implementation of linear electronics based on small-size, low-power charge...
This paper discusses the criteria that have been adopted tooptimize the signal processing in a showe...
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise ...
AbstractOptimal detector / pre-amplifier combinations have been identified for the use of light ion ...
High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test...
Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the pres...
The development of semiconductor detectors with an increased tolerance to high radiation levels ofte...
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) te...
Abstract Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has ...
The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of im...
This article belongs to the Section Physical Sensors.Gain suppression induced by excess carriers in ...
We present a new experimental procedure based on the ion beam induced charge collection (IBIC) to ch...
Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investi...
A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system f...
Abstract Ion beam induced charge collection (IBIC) is a powerful experimental technique to charact...
Abstract The design and implementation of linear electronics based on small-size, low-power charge...
This paper discusses the criteria that have been adopted tooptimize the signal processing in a showe...
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise ...