AbstractThree-dimensional finite element method is used to simulate the formation, self-assembly and shape transition of heteroepitaxial islands during Stranski–Krastonov growth. In the formulation, strain energy, surface energy, surface anisotropy and elastic anisotropy of a cubic lattice structure are taken into account. In the simulations, the SiGe/Si material system is used as a model system. An empirical surface energy as a function of surface orientation is proposed. The minimum energy surfaces are identified based on existing experimental observations. The simulation results show that the coupling of elastic energy relaxation, surface energy anisotropy and elastic anisotropy strongly influences the surface roughening morphology, self...
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Monte Carlo simulations are reported for an atomistic model of heteroepitaxial growth. Dislocations ...
AbstractThree-dimensional finite element method is used to simulate the formation, self-assembly and...
Journal ArticleWe show that the equilibrium shape anisotropy of two-dimensional islands in heteroepi...
A strained epitaxial film can undergo surface instability and self assemble into discrete islands. ...
For heteroepitaxial growth of InAs islands on GaAs 001 , a transition of shapes is observed experime...
In this paper we revisit models for the description of the evolution of crystalline films with aniso...
2009-2010 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unpreced...
2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
We investigate the driving forces that determine the growth mode of heteroepitaxial Ge layers grown ...
For heteroepitaxial growth of InAs islands on GaAs(001), a transition of shapes is observed experime...
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Monte Carlo simulations are reported for an atomistic model of heteroepitaxial growth. Dislocations ...
AbstractThree-dimensional finite element method is used to simulate the formation, self-assembly and...
Journal ArticleWe show that the equilibrium shape anisotropy of two-dimensional islands in heteroepi...
A strained epitaxial film can undergo surface instability and self assemble into discrete islands. ...
For heteroepitaxial growth of InAs islands on GaAs 001 , a transition of shapes is observed experime...
In this paper we revisit models for the description of the evolution of crystalline films with aniso...
2009-2010 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unpreced...
2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
We investigate the driving forces that determine the growth mode of heteroepitaxial Ge layers grown ...
For heteroepitaxial growth of InAs islands on GaAs(001), a transition of shapes is observed experime...
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Monte Carlo simulations are reported for an atomistic model of heteroepitaxial growth. Dislocations ...