Advances in InP and competing materials

AbstractThis May's 13th Indium Phosphide and Related Materials conference (IPRM'01) in Nara, Japan attracted a record 470 delegates, despite the slowdown in the industry (perhaps due to it mainly hitting the GaAs sector) and there being few delegates from travel-restricted companies like Lucent and Agilent. As well as advances such as monolithically grown and integrated MEMS-tunable VCSELs, reports included the extension of more temperature-stable materials than InP (such as GaInNAs) to 1.55 μm lasers for the first time, as well as advances in InP electronics and metamorphic GaAs-based devices