DOIAbstract
AbstractWe present a review of the latest achievements of the UNITRIDE project in terms of GaN-based quantum engineered photonic devices operating in the near- to far-infrared spectral range
AbstractWe present a review of the latest achievements of the UNITRIDE project in terms of GaN-based quantum engineered photonic devices operating in the near- to far-infrared spectral range
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their p...
Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressan...
Intersubband devices based on III-nitrides have interesting properties for optoelectronics and photo...
Abstract We review our recent progress on the fabrication of near-infrared photodetectors based on i...
This work reports on the design, epitaxial growth and characterization of AI(Ga)N/GaN quantum wells ...
Les nitrures d’éléments III (III-N) sont des matériaux prometteurs pour la réalisation de dispositif...
Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Autho...
Les nitrures d’éléments III (III-N) sont des matériaux prometteurs pour la réalisation de dispositif...
Ce mémoire résume des efforts dans la conception électronique, la croissance épitaxiale et la caract...
This work reports on the design, epitaxial growth and characterization of Al(Ga)N/GaN quantum wells ...
Ce mémoire résume des efforts dans la conception électronique, la croissance épitaxiale et la caract...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their p...
Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressan...
Intersubband devices based on III-nitrides have interesting properties for optoelectronics and photo...
Abstract We review our recent progress on the fabrication of near-infrared photodetectors based on i...
This work reports on the design, epitaxial growth and characterization of AI(Ga)N/GaN quantum wells ...
Les nitrures d’éléments III (III-N) sont des matériaux prometteurs pour la réalisation de dispositif...
Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Autho...
Les nitrures d’éléments III (III-N) sont des matériaux prometteurs pour la réalisation de dispositif...
Ce mémoire résume des efforts dans la conception électronique, la croissance épitaxiale et la caract...
This work reports on the design, epitaxial growth and characterization of Al(Ga)N/GaN quantum wells ...
Ce mémoire résume des efforts dans la conception électronique, la croissance épitaxiale et la caract...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our dail...
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