AbstractThis paper presents the features of a pH measuring probes, the novelty of this probe is the use of an Ion Sensitive Field Effect Transistor (ISFET). This allows the pH measurements in liquids and solids probe, so it is possible to develop devices for the measurement of pH in the soil. The ISFET probe is a recent development, for this reason these manufacturers do not offer the same technical information, it is necessary to perform a characterization process to understand its operation and in order to design the steps necessary signal conditioning. The characteristics of process of the sensor are made by means of measurements of substances in which allow the control of pH and temperature. The procedure results are compared with the s...
Tranzystor polowy czuły na jony (ISFET – Ion Sensitive Field Effect Transistor) umozliwia pomiar kon...
Czujnik typu ISFET (Ion Sensitive Field Effect Transistor) w wykonaniu podstawowym - bez naniesionyc...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process i...
AbstractThis paper presents the features of a pH measuring probes, the novelty of this probe is the ...
The need for improved system’s response time, sensitivity, selectivity and miniaturization has conti...
Nowadays, Organic semiconductors (OSCs) are receiving increasing attention these days because they h...
The use of microsensors for in-field monitoring of environmental parameters is gaining interest due ...
ISFET is one of the most commonly used devices in monitoring pH level of solutions. In this report s...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
This paper presents a robust, low-power and compact ion-sensitive field-effect transistor (ISFET) se...
The use of microsensors for in-field monitoring of environmental parameters is gaining interest due...
This study involves the design and fabrication of an Ion-Sensitive Field Effect Transistor (ISFET), ...
345-353Introduced as a tool for electrophysiology three and a half decades ago, the ion-sensitive fi...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process i...
Abstract: The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS t...
Tranzystor polowy czuły na jony (ISFET – Ion Sensitive Field Effect Transistor) umozliwia pomiar kon...
Czujnik typu ISFET (Ion Sensitive Field Effect Transistor) w wykonaniu podstawowym - bez naniesionyc...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process i...
AbstractThis paper presents the features of a pH measuring probes, the novelty of this probe is the ...
The need for improved system’s response time, sensitivity, selectivity and miniaturization has conti...
Nowadays, Organic semiconductors (OSCs) are receiving increasing attention these days because they h...
The use of microsensors for in-field monitoring of environmental parameters is gaining interest due ...
ISFET is one of the most commonly used devices in monitoring pH level of solutions. In this report s...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
This paper presents a robust, low-power and compact ion-sensitive field-effect transistor (ISFET) se...
The use of microsensors for in-field monitoring of environmental parameters is gaining interest due...
This study involves the design and fabrication of an Ion-Sensitive Field Effect Transistor (ISFET), ...
345-353Introduced as a tool for electrophysiology three and a half decades ago, the ion-sensitive fi...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process i...
Abstract: The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS t...
Tranzystor polowy czuły na jony (ISFET – Ion Sensitive Field Effect Transistor) umozliwia pomiar kon...
Czujnik typu ISFET (Ion Sensitive Field Effect Transistor) w wykonaniu podstawowym - bez naniesionyc...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process i...