Effect of Diamond and Graphene Heat Spreaders on Characteristics of AlGaN/GaN HEMT
- Grishakov, K.S.
- Elesin, V.F.
- Ryzhuk, R.V.
- Kargin, N.I.
- Minnebaev, S.V.
Publication date
December 2015
DOI Publisher
The Authors. Published by Elsevier B.V. ISSN
1875-3892 Citation count (estimate)
1Abstract
AbstractThe impact of diamond and graphene heat spreading layers on the thermal and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulations in the hydrodynamic model. It is shown that the introduction of heat spreader significantly reduced maximum device temperature, increased the device lifetime, and improved current-voltage characteristics. The conditions under which the heat spreader works most effectively were found
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