Structural and Optical Properties of SiOx Films Deposited by HFCVD
- López, J. A. Luna
- Salgado, G. García
- Pedraza, A. Ponce
- Valerdi, D. E. Vázquez
- López, J. Carrillo
- Sánchez, A. Morales
- Becerril, T. Díaz
- Andrés, E. Rosendo
- Santiesteban, H. Juárez
Publication date
December 2011
DOI Publisher
Published by Elsevier Ltd. ISSN
1877-7058 Citation count (estimate)
5Abstract
AbstractRoom-temperature photoluminescence (PL) of non-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapour deposition (HFCVD) technique was studied. The effect of the growth temperature was analyzed. These films show a wide and intense visible PL. A wavelength-shift of the absorption edge and an increasing of the energy band gap were observed when the substrate temperature was decreased. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) showed the existence of Si nanocrystals (Si-ncs) with diameters between 1 and 6.5nm within of the SiOx films. The luminescence in these SiOx films is explained according to the combination of different mechanism
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