AbstractFor the past three years InPact (Pomblière, France) has been examining the use of TOF-SIMS for analysis of the surface (first) monolayer of InP wafers. Here, the company outlines the technique and the benefits to surface quality that can be gained from its use
In addition to structural information, detailed knowledge of the local chemical environment proves t...
Secondary ion mass spectrometry has been the main technique to characterize depth distributions of d...
L'électronique organique a connu durant la dernière décennie un essor considérable. La production de...
To evaluate the reliability of ToF-SIMS to quantitatively detect trace metals on silicon wafers, pur...
This study deals with the secondary ion yield improvement induced by using C-60(+) primary ions inst...
AbstractSecondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique fo...
Die vorliegende Arbeit beschäftigt sich sowohl mit der Entwicklung der TOF-SIMS Gerätetechnologie a...
Next generation devices for microelectronics feature nanometric dimensions and incorporate heterogen...
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary io...
Les dispositifs avancés pour la microélectronique intègrent divers matériaux et sont de dimensions n...
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary io...
Aujourd’hui, une grande variété de matériaux dit « fragiles » sont intégrés dans des dispositifs mic...
Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful tool for investigating the e...
ABSTRACT: The production of high-quality self-assembled monolayers (SAMs) followed by layer-by-layer...
This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on t...
In addition to structural information, detailed knowledge of the local chemical environment proves t...
Secondary ion mass spectrometry has been the main technique to characterize depth distributions of d...
L'électronique organique a connu durant la dernière décennie un essor considérable. La production de...
To evaluate the reliability of ToF-SIMS to quantitatively detect trace metals on silicon wafers, pur...
This study deals with the secondary ion yield improvement induced by using C-60(+) primary ions inst...
AbstractSecondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique fo...
Die vorliegende Arbeit beschäftigt sich sowohl mit der Entwicklung der TOF-SIMS Gerätetechnologie a...
Next generation devices for microelectronics feature nanometric dimensions and incorporate heterogen...
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary io...
Les dispositifs avancés pour la microélectronique intègrent divers matériaux et sont de dimensions n...
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary io...
Aujourd’hui, une grande variété de matériaux dit « fragiles » sont intégrés dans des dispositifs mic...
Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful tool for investigating the e...
ABSTRACT: The production of high-quality self-assembled monolayers (SAMs) followed by layer-by-layer...
This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on t...
In addition to structural information, detailed knowledge of the local chemical environment proves t...
Secondary ion mass spectrometry has been the main technique to characterize depth distributions of d...
L'électronique organique a connu durant la dernière décennie un essor considérable. La production de...
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