DOIAbstract
AbstractTechnologies and Devices International Inc (TDI), a privately held Maryland corporation has made a significant step in continuing development of new Silicon Carbide (SiC) power electronic products and demonstrated a 1cm2 SiC diode chip. The chip is a 4H-SiC Schottky diode fabricated to block 300V and capable for forward currents up to 300A. The chip was fabricated based on 4H-SiC wafer with defect density substantially reduced by proprietary defect healing technology developed at TDI. This technology converts standard commercial SiC wafers in to a product with extremely low density of micropipes, those device-killing defects inherent to silicon carbide materials.This is a short news story only. Visit www.three-fives.com for the late...
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