III-V nitrides for electronic and UV applications

AbstractTremendous progress has been made in recent years in the growth, doping and processing technologies of the wide bandgap semiconductors. The principal driving force behind this activity is the potential use of, for example, the 1114 nitrides in high-power, high-temperature, high-frequency electronic and optical devices resistant to radiation damage. This article reports the current state of the art for producing some selected devices from the III-V nitrides