AbstractIn this work, we perform a detailed balance analysis of the maximum conversion efficiency of solar cells made from III-nitride materials. First, we present an analysis of single junction solar cells made from InxGa1−xN alloys, and next we focus on tandem cells made from III-nitride and silicon materials. The performed simulations show that the two sub-cells system In0.33Ga0.67N/Si may present 42.43% maximum conversion efficiency, and the three sub-cells system In0.33Ga0.67N/Si/InN 47.83% efficiency under one-sun conditions
International audienceGallium arsenide phosphide nitride shows promise for developing highefficiency...
In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of ...
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor struct...
Les nitrures des éléments III-V, ont été largement étudiés en raison de leurs applications dans les ...
During the past few years a great variety of multi-junction solar cells has been developed with the ...
We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connecte...
This article examines the best fraction of indium (x) and critical depth (H) of a single junction ta...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
III-Nx–V1−x highly mismatched alloys HMAs have been proposed as promising material candidates for ...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Theoretical models show that tandem solar cells can reach efficiency of more than 50 %. To achieve e...
We report a detailed performance assessment of triple junction dilute nitride solar cells fabricated...
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4 - 2.9 eV...
International audienceGallium arsenide phosphide nitride shows promise for developing highefficiency...
In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of ...
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor struct...
Les nitrures des éléments III-V, ont été largement étudiés en raison de leurs applications dans les ...
During the past few years a great variety of multi-junction solar cells has been developed with the ...
We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connecte...
This article examines the best fraction of indium (x) and critical depth (H) of a single junction ta...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
III-Nx–V1−x highly mismatched alloys HMAs have been proposed as promising material candidates for ...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Nitrides of III-V elements, have been widely studied because of their interessting applications in t...
Theoretical models show that tandem solar cells can reach efficiency of more than 50 %. To achieve e...
We report a detailed performance assessment of triple junction dilute nitride solar cells fabricated...
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4 - 2.9 eV...
International audienceGallium arsenide phosphide nitride shows promise for developing highefficiency...
In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of ...
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor struct...