AbstractDuring the past five years VTT has actively developed fabrication processes for the state-of-the-art edgeless strip and pixel detectors with a negligible dead region at the edges. The article summarizes the measured properties of VTT's edgeless detectors and gives references to the relevant journal papers. The measured properties include leakage current, breakdown voltage and capacitance dependences on the detector thickness and polarity. Earlier X-ray tube and radiation source characterization results are revised and new ones are introduced to reveal a pixel response as a function of bias voltage and pixel location in the detector's pixel matrix. Part of the article concentrates on alpha particle characterization of the detectors, ...
Silicon micropattern devices are crucial components of detector systems designed to study decays of ...
Abstract This paper presents the edge Transient Current Technique (eTCT) measurements...
AbstractThe edge surfaces of single crystal CdTe play an important role in the electronic properties...
During the past five years VTT has actively developed fabrication processes for the state-of-the-art...
During past five years VTT has actively developed edgeless detector fabrication process. The straigh...
VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) micr...
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to impro...
The edgeless or active edge pixel detector has gained increasingly attention due to its superiority ...
VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip ...
AbstractThe performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is pres...
VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detec...
VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip ...
Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development a...
Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float z...
Edgeless radiation detector has gained increased attention due to its superiority in the defect-free...
Silicon micropattern devices are crucial components of detector systems designed to study decays of ...
Abstract This paper presents the edge Transient Current Technique (eTCT) measurements...
AbstractThe edge surfaces of single crystal CdTe play an important role in the electronic properties...
During the past five years VTT has actively developed fabrication processes for the state-of-the-art...
During past five years VTT has actively developed edgeless detector fabrication process. The straigh...
VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) micr...
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to impro...
The edgeless or active edge pixel detector has gained increasingly attention due to its superiority ...
VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip ...
AbstractThe performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is pres...
VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detec...
VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip ...
Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development a...
Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float z...
Edgeless radiation detector has gained increased attention due to its superiority in the defect-free...
Silicon micropattern devices are crucial components of detector systems designed to study decays of ...
Abstract This paper presents the edge Transient Current Technique (eTCT) measurements...
AbstractThe edge surfaces of single crystal CdTe play an important role in the electronic properties...