AbstractIn the paper, plasma immersion ion implantation (PIII) has been put forward to texture and dope the silicon for solar cells. The influence of PIII parameters on the surface structure has been investigated. The various surface structure of the silicon can be obtained by PIII texturing. Compared with acid texturing solar cells, the average conversion efficiency of PIII texturing solar cells has been improved by 0.7% absolute gain. The characteristics of PN junction formed by PIII doping have been investigated. The conversion efficiency of the solar cell can reach as high as 14.84% using PIII doping
The multi-crystalline silicon (me-Si) solar cell is considered to be one of the most promising cel...
Progress in the development of ion implanted silicon solar cells is reported. Effective back surface...
AbstractThis paper presents the use of ion-implantation for high-volume manufacturing of silicon sol...
AbstractIn the paper, plasma immersion ion implantation (PIII) has been put forward to texture and d...
AbstractIBS and INES have recently demonstrated the strong relevance of the plasma-immersion ion imp...
Session 6: Process Integration and Low-cost ManufacturingInternational audienceA key step to achieve...
16th International Conference on Ion Implantation Technology, Marseille, FRANCE, JUN 11-16, 2006Inte...
Cette thèse a pour but d'étudier le dopage par implantation ionique pour la réalisation des différen...
Le dopage du silicium par implantation ionique pour le photovoltaïque est une application relativeme...
This study aims at investigating the use of ion implantation doping for the realization of emitters ...
Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the...
Electricity consumption is increased in last twenty years. It is crucial therefore to find alternati...
International audienceIon Beam Services (IBS) has developed processes dedicated to silicon-based sol...
The multi-crystalline silicon (me-Si) solar cell is considered to be one of the most promising cel...
Progress in the development of ion implanted silicon solar cells is reported. Effective back surface...
AbstractThis paper presents the use of ion-implantation for high-volume manufacturing of silicon sol...
AbstractIn the paper, plasma immersion ion implantation (PIII) has been put forward to texture and d...
AbstractIBS and INES have recently demonstrated the strong relevance of the plasma-immersion ion imp...
Session 6: Process Integration and Low-cost ManufacturingInternational audienceA key step to achieve...
16th International Conference on Ion Implantation Technology, Marseille, FRANCE, JUN 11-16, 2006Inte...
Cette thèse a pour but d'étudier le dopage par implantation ionique pour la réalisation des différen...
Le dopage du silicium par implantation ionique pour le photovoltaïque est une application relativeme...
This study aims at investigating the use of ion implantation doping for the realization of emitters ...
Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the...
Electricity consumption is increased in last twenty years. It is crucial therefore to find alternati...
International audienceIon Beam Services (IBS) has developed processes dedicated to silicon-based sol...
The multi-crystalline silicon (me-Si) solar cell is considered to be one of the most promising cel...
Progress in the development of ion implanted silicon solar cells is reported. Effective back surface...
AbstractThis paper presents the use of ion-implantation for high-volume manufacturing of silicon sol...