The scanning ion microscopy is gaining momentum as it provides several key advantages over scanning electron microscopy: (i) enhanced depth of focus, (ii) improved surface and element sensitivity, (iii) better lateral resolution, and (iv) nanomachining and milling. It uses different ions to achieve these tasks ranging from inert gases like helium and neon for imaging and ion milling. Other gases such as argon, nitrogen, and oxygen have potential for further sputtering and etching. It is therefore crucial that gas field ion sources provide necessary robustness and stability for range of various gases.Peer reviewed: YesNRC publication: Ye
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. S...
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled c...
A next generation ion source suitable for both high resolution focused ion beam milling and imaging ...
A next generation ion source suitable for both high resolution focused ion beam milling and imaging ...
Broad-beam ion sources are used for a number of important industrial etching and deposition applicat...
During bombardment of solid samples with rare gas ions, charge-transfer events can convert reemitted...
Dr. John Notte from Carl Zeiss, presented a lecture at the Nano@Tech Meeting on February 9, 2010 at ...
Field ion microscopy (FIM) using neon imaging gas was used to evaluate a W(111) nanotip shape during...
Helium ion microscopy (HIM) offers the highest spatial resolution surface imaging of any scanning be...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Focused Ion Beams (FIB) are widely used in the semiconductor industry for milling, sputtering and im...
This book covers the fundamentals of Helium Ion Microscopy (HIM) including the Gas Field Ion Source ...
The ion current available in a field-ion image varies from 10<SUP>-12</SUP> to 10<SUP>-9</SUP> A, wh...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. S...
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled c...
A next generation ion source suitable for both high resolution focused ion beam milling and imaging ...
A next generation ion source suitable for both high resolution focused ion beam milling and imaging ...
Broad-beam ion sources are used for a number of important industrial etching and deposition applicat...
During bombardment of solid samples with rare gas ions, charge-transfer events can convert reemitted...
Dr. John Notte from Carl Zeiss, presented a lecture at the Nano@Tech Meeting on February 9, 2010 at ...
Field ion microscopy (FIM) using neon imaging gas was used to evaluate a W(111) nanotip shape during...
Helium ion microscopy (HIM) offers the highest spatial resolution surface imaging of any scanning be...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Focused Ion Beams (FIB) are widely used in the semiconductor industry for milling, sputtering and im...
This book covers the fundamentals of Helium Ion Microscopy (HIM) including the Gas Field Ion Source ...
The ion current available in a field-ion image varies from 10<SUP>-12</SUP> to 10<SUP>-9</SUP> A, wh...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolut...
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. S...
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled c...