Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.published_or_final_versio
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by ...
Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and chara...
[[abstract]]We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal In...
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricatin...
We fabricated transferable thin-film gallium nitride (GaN) light-emitting diodes (LEDs) via laser li...
This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible su...
The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication ...
Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and chara...
Due to their high efficiency and compact design, GaN-based LEDs are nowadays the light source of cho...
Vertical structure LEDs have been fabricated with a novel light extraction composite surface structu...
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a...
GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing...
Gallium nitride (GaN) is a promising semiconductor material for creating versatile light-emitting di...
To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach...
International audienceThe development of flexible optoelectronic devices has led to the appearance o...
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by ...
Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and chara...
[[abstract]]We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal In...
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricatin...
We fabricated transferable thin-film gallium nitride (GaN) light-emitting diodes (LEDs) via laser li...
This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible su...
The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication ...
Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and chara...
Due to their high efficiency and compact design, GaN-based LEDs are nowadays the light source of cho...
Vertical structure LEDs have been fabricated with a novel light extraction composite surface structu...
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a...
GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing...
Gallium nitride (GaN) is a promising semiconductor material for creating versatile light-emitting di...
To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach...
International audienceThe development of flexible optoelectronic devices has led to the appearance o...
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by ...
Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and chara...
[[abstract]]We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal In...