Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
- Li, X
- Leung, CW
- Pong, PWT
- Chan, MS
- Lin, KW
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Session W1P: paper no. W1P-4-19Exchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices. © 2016 IEEE.Link_to_subscribed_fulltex
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