Characterisation of integrated GaN power switches using pulsed-IV and time domain measurements

This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.4 page(s