Performance analysisis of PZT (0.52/0.48) for high temperature and pressure sensing applications
- Asadnia, M
- Kottapalli, A. G. P
- Miao, J. M
- Randles, A. B
- Tsai, J. M
Publication date
January 2013
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In an effort to improve the understanding of the behavior of PZT-based MEMS pressure sensor at high temperature and high pressure conditions, a PZT (0.52/0.48) circular microdiphragm pressure sensor is developed. The proposed sensor is characterized for high temperatures (390°C) and under oscillatory pressure.4 page(s
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