Add to ORKGWe have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.1 page(s
Transistors (HBT’s) by means of low frequency noise characterizations carried out in the 100Hz-100kH...
An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled No...
requirements in terms of oscillator phase noise. Moreover, many applications market requirements dr...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
Correct measurement of low frequency noise in a transistor requires prior knowledge of its s-paramet...
This workshop provides a comprehensive overview on recent advances in several areas of low-noise osc...
This paper presents an exhaustive non-linear modelling including the low-frequency noise sources whi...
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transis...
An empirical nonlinear noise model for bipolar transistors, deriving from the charge-controlled nonl...
The thesis presents two major concerns in the design of low phase-noise MMIC VCOs; the active device...
In this project, modification of our current low frequency noise setup by including a probe station...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase...
Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved sati...
Transistors (HBT’s) by means of low frequency noise characterizations carried out in the 100Hz-100kH...
An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled No...
requirements in terms of oscillator phase noise. Moreover, many applications market requirements dr...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
Correct measurement of low frequency noise in a transistor requires prior knowledge of its s-paramet...
This workshop provides a comprehensive overview on recent advances in several areas of low-noise osc...
This paper presents an exhaustive non-linear modelling including the low-frequency noise sources whi...
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transis...
An empirical nonlinear noise model for bipolar transistors, deriving from the charge-controlled nonl...
The thesis presents two major concerns in the design of low phase-noise MMIC VCOs; the active device...
In this project, modification of our current low frequency noise setup by including a probe station...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results ha...
GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase...
Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved sati...
Transistors (HBT’s) by means of low frequency noise characterizations carried out in the 100Hz-100kH...
An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled No...
requirements in terms of oscillator phase noise. Moreover, many applications market requirements dr...