This paper proposed a novel modeling method of bonding wires array for internally matched network for high power and high efficiency power amplifier design. Based on this modeling method, a 120 W X-band internally-matched AlGaN/GaN PA under continues wave (CW) condition is presented. The proposed power amplifier can provide a relatively stable output power above 50.6 dBm (115 W) and power added efficiency above 42% from 7.7 GHz to 8.7 GHz, while maintain a stable gain above 10.1 dB. This work is relatively competitive comparing with other state-of-the-art works.3 page(s
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
In this paper we report on the development of an RF high power amplifier, based on normally-on AlGaN...
With the continuous development of modern wireless communication systems, demand for cost effective,...
This paper proposed a novel internally pre-matching network for high power and high efficiency power...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
In this thesis a bonded Gallium nitride (GaN) power amplifier (PA) is designed using 3D modeling too...
Abstract: Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substr...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized a...
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/G...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
International audienceThis paper deals with non-linear modeling of power GaN HEMT and design of powe...
In recent years, monolithic integrated power amplifiers based on gallium nitride (GaN) have become a...
In this letter, a novel compact on-chip output matching network to achieve harmonic impedance matchi...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
In this paper we report on the development of an RF high power amplifier, based on normally-on AlGaN...
With the continuous development of modern wireless communication systems, demand for cost effective,...
This paper proposed a novel internally pre-matching network for high power and high efficiency power...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
In this thesis a bonded Gallium nitride (GaN) power amplifier (PA) is designed using 3D modeling too...
Abstract: Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substr...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized a...
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/G...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
International audienceThis paper deals with non-linear modeling of power GaN HEMT and design of powe...
In recent years, monolithic integrated power amplifiers based on gallium nitride (GaN) have become a...
In this letter, a novel compact on-chip output matching network to achieve harmonic impedance matchi...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
In this paper we report on the development of an RF high power amplifier, based on normally-on AlGaN...
With the continuous development of modern wireless communication systems, demand for cost effective,...