This paper proposed a novel internally pre-matching network for high power and high efficiency power amplifier design. Based on this matching network, a push-pull GaN power amplifier with the high saturated output power of 805 W and peak PAE of 74.5% is realized. The proposed power amplifier can provide a relatively stable output power above 58.5 dBm (707 W) in the band of 400 MHz to 500 MHz while maintain a stable gain above 17.5 dB.3 page(s
A broadband, high efficiency push-pull power amplifier is presented between 0.5 GHz and 1.5 GHz. Coa...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This contribution describes the design and validation of a L-band hybrid high power amplifier for ra...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
This paper proposed a novel modeling method of bonding wires array for internally matched network fo...
In this letter, a novel methodology to achieve output broadband matching is proposed. Based on this ...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
Due to the increased demand of higher data rate transfer and therefore bandwidth, the development of...
A broadband push-pull RF power amplifier (PA) is designed and implemented. The PA yields high effici...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
This paper proposes a design method to minimize the phase distortion (AM/PM) in Gallium Nitride (GaN...
In this letter, a novel compact on-chip output matching network to achieve harmonic impedance matchi...
This paper deals with the design, manufacture and test of a high efficiency power amplifier for L-ba...
A comparative evaluation is provided in this paper regarding two design approaches for Ka-band Galli...
A broadband, high efficiency push-pull power amplifier is presented between 0.5 GHz and 1.5 GHz. Coa...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This contribution describes the design and validation of a L-band hybrid high power amplifier for ra...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
This paper proposed a novel modeling method of bonding wires array for internally matched network fo...
In this letter, a novel methodology to achieve output broadband matching is proposed. Based on this ...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
Due to the increased demand of higher data rate transfer and therefore bandwidth, the development of...
A broadband push-pull RF power amplifier (PA) is designed and implemented. The PA yields high effici...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
This paper proposes a design method to minimize the phase distortion (AM/PM) in Gallium Nitride (GaN...
In this letter, a novel compact on-chip output matching network to achieve harmonic impedance matchi...
This paper deals with the design, manufacture and test of a high efficiency power amplifier for L-ba...
A comparative evaluation is provided in this paper regarding two design approaches for Ka-band Galli...
A broadband, high efficiency push-pull power amplifier is presented between 0.5 GHz and 1.5 GHz. Coa...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This contribution describes the design and validation of a L-band hybrid high power amplifier for ra...